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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2753GR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The PA2753GR is Dual N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
PACKAGE DRAWING (Unit: mm)
8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.
+0.10 -0.05
FEATURES
* Dual chip type * Low on-state resistance RDS(on)1 = 21.4 m MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 31.6 m MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 36.4 m MAX. (VGS = 4.0 V, ID = 4.0 A) * Low Ciss: Ciss = 620 pF TYP. * Built-in G - S protection diode * Small and surface mount package (Power SOP8)
6.0 0.3 4.4 0.8
1.8 Max.
1.44
0.15
0.05 Min.
0.5 0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
PA2753GR
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 20 8.0 32 1.7 2.0 150 -55 to + 150 8 6.4
V V A A W W C C A mJ
EQUIVALENT CIRCUIT (1/2 Circuit)
Drain
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Gate
Body Diode
IAS EAS
Gate Protection Diode
Source
Notes 1. PW 10 s, Duty Cycle 1% 2 2. TA = 25C, Mounted on ceramic substrate of 2000 mm x 2.2 mm 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , VGS = 20 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15782EJ1V0DS00 (1st edition) Date Published February 2002 NS CP(K) Printed in Japan
(c)
2001
PA2753GR
ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 24 V VGS = 10 V ID = 8.0 A IF = 8.0 A, VGS = 0 V IF = 8.0 A, VGS = 0 V di/dt = 100 A/ s TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 18 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VGS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VGS = 4.0 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 4.0 A VGS = 10 V RG = 10 1.5 3.0 2.0 5.5 17.1 23.3 26.7 620 160 100 11.2 7.0 33.0 6.7 14.9 2.2 4.3 0.86 25 18 21.4 31.6 36.4 MIN. TYP. MAX. 10 10 2.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0
VDS
VDS
Wave Form
0 td(on) ton
= 1 s Duty Cycle 1%
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G15782EJ1V0DS
PA2753GR
TYPICAL CHARACTERISTICS (TA = 25C)
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 40 Pulsed 35 VGS = 4.5 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
ID - Drain Current - A
ID - Drain Current - A
10
30 VGS = 10 V 25 VGS = 4.0 V 20 15 10 5
1
TA = 150C TA = 75C TA = 25C TA = -25C
0.1
0.01 0
VDS = 10 V 1 2 3 4 5 VGS - Gate to Source Voltage - V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
100
VDS = 10 V Pulsed TA = -25C TA = 25C
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed 90 ID = 4.0 A 80 70 60 50 40 30 20 10 0 0 5 10 15 20 ID = 8.0 A
10
1
TA = 75C TA = 150C
0.1 0.01
0.1
1 ID - rain Current - A
10
100
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
100 80
Pulsed VGS = 4.0 V
3 VDS = 10 V ID = 1 mA 2.5 2 1.5 1 0.5 0
60
40
VGS = 4.5 V
20 VGS = 10 V 0 0.1 1 10 100
- 50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
Data Sheet G15782EJ1V0DS
3
PA2753GR
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 Pulsed 40 VGS = 4 V 30 VGS = 4.5 V VGS = 10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed
IF - Diode Forward Current - A
VGS = 10 V 10 VGS = 4 V
1
VGS = 0 V
20
0.1
10 0 - 50 ID = 4.0 A 0 50 100 150
0.01
0
0.5
1
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
100 tf 10 tr 1 VDS = 15 V VGS = 10 V RG = 10 100 td(off) td(on)
1000 Ciss
100
Coss Crss
10 0.1
1
10
100
0.1 0.1
1
10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
VDS - Drain to Source Voltage - V
25 20 15 10 5 VDS 0 0 VDD = 24 V VDD = 15 V VDD = 6 V
10 8 VGS 6 4 2 0 2 4 6 8 10 12 14 16 QG - Gate Charge - nC
100
10
1 0.1
1
10
100
ID - Drain Current - A
4
Data Sheet G15782EJ1V0DS
VGS - Gate to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A/ s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 14 35 ID = 8.0 A 12 30
PA2753GR
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
PT - Total Power Dissipation - W/package
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 2 unit 1 unit
dT - Percentage of Rated Power - %
100 80 60 40 20
Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
0
20
40
60
80
100 120 140 160
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
S(o n)
ID - Drain Current - A
10
RD VGS (at
d ite ) Lim 0 V =1
ID(pulse)
PW
1m s
TA = 25C Single Pulse
=1 00
ID(DC)
10
s
1
Po we r
10 0m s
ms
Dis
sip
ati
on
Lim
ite
d
0.1
Mounted on ceramic substrate of
2
0.01 2000 mm x 2.2 mm, 1 unit 1 0.1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - C/W
1000 Rth(ch-A) = 73.5C/W 100
10
1
0.1
Mounted on ceramic substrate of 2000 mm2 x 2.2 mm Single Pulse, 1 unit, TA = 25C
0.01 100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15782EJ1V0DS
5
PA2753GR
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100
SINGLE AVALANCHE ENERGY DERATING FACTOR 120 RG = 25 VDD = 15 V 0V VGS = 20 IAS 8 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
RG = 25 VDD = 15 V 0V VGS = 20 Starting Tch = 25C
100 80 60 40 20 0 25
10
IAS = 8 A
EAS = 6.4 mJ
1 10
100
1m
10 m
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet G15782EJ1V0DS
PA2753GR
[MEMO]
Data Sheet G15782EJ1V0DS
7
PA2753GR
* The information in this document is current as of February, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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